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Field Effect Transistor Silicon N Channel MOS
4 V gate drive
Low drain-source On resistance : RDS (ON) = 66 mOHMS (typ.)
High forward transfer adminttance : |Yfs| = 16 S (typ.)
Low leakage current : IDSS = 100 uA (max.) (VDS = 100 V)
Enhancement-mode : Vth = 0.8 @ 2.0 V (VDS = 10C, ID = 1 mA)
Applications
Chopper Regulator
DC-DC converters and Motor Drive
Miscellaneous
2SK2391
Semiconductor