- On request
2SK2461
$3.68
No tax
2SK2461
Política de seguridad
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Features
MOS FIELD EFFECT TRANSISTOR
Low ON-Resistance
RDS(on)1 = 0.10 Ohms MAX. (@ VGS = 10 V, ID = 4.0 A)
RDS(on)2 = 0.15 Ohms MAX. (@ VGS = 4 V, ID = 4.0 A)
Low ON-Resistance
RD(ON)1 = 80mOHMS MAX. (@ Vgs = 10 V, ID = 10 A)
RDS(ON)2 = 0.1 Ohms MAX, (@ VGS = 4 V, ID = 10A)
LOW Ciss Ciss = 1400pF TYP.
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
Aplications
APPLICATIONS
High speed switching
2SK2461
Specific References
- MPN
- 2SK2461
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