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2SK3562

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TRANSISTORES N MOS

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Datasheet2SK3562

6A/600V/1U

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Features

  • Silicon N Channel MOS Type Transistor
  • Low drain-source ON resistance : RDS(ON) =0.9 Ohms (typ)
  • High forward transfer admittance : Yfs = 5.0 S (typ)
  • Low leakage current : IDSS = 100 uA (VDS = 600 V)
  • Enhancement mode : Vth = 2.0 - 4.0 V (VDS = 10 V, ID = 1 mA)

Aplications

  • Applications
  • Switching Regulator
2SK3562

Specific References

MPN
2SK3562
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