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Silicon N Channel MOS Type Transistor
Low drain-source ON resistance : RDS(ON) =0.9 Ohms (typ)
High forward transfer admittance : Yfs = 5.0 S (typ)
Low leakage current : IDSS = 100 uA (VDS = 600 V)
Enhancement mode : Vth = 2.0 - 4.0 V (VDS = 10 V, ID = 1 mA)
Applications
Switching Regulator