- On request
MTW8N60E
$10.50
No tax
MTW8N60E
Política de seguridad
(Our products have limited warranty, please check our terms)
Política de entrega
(Delivery 1-2 days for products in stock)
Features
Power MOSFET
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Dicrete Fast Recovery Diode
Diode is Characterized for Use in Bridege Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Isolated Mounting Hole Reduces Mounting Hardware
Aplications
Semiconductors High Power Equipment Repair
MTW8N60E
Specific References
- MPN
- MTW8N60E
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