- On request
MTW8N60E
10,50 $
Nessuna tassa
MTW8N60E
Política de seguridad
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Features
Power MOSFET
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Dicrete Fast Recovery Diode
Diode is Characterized for Use in Bridege Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Isolated Mounting Hole Reduces Mounting Hardware
Aplications
Semiconductors High Power Equipment Repair
MTW8N60E
Riferimenti Specifici
- MPN
- MTW8N60E
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