- On request
RJP60D0
$13.13
No tax
RJP60D0
Política de seguridad
(Our products have limited warranty, please check our terms)
Política de entrega
(Delivery 1-2 days for products in stock)
Features
Silicon N Channel IGBT
Short circuit withstand time (5 us typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.6 typ. (IC = 22 A, Vge = 15 V, Ta = 25 C)
Gate to emitter voltage rating +- 30 V
Pb-free lead plating and chip bonding
Aplications
Semiconductors High Power Equipment Repair
RJP60D0
Specific References
- MPN
- RJP60D0
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