- On request
RJP60D0
13,13 $
Nessuna tassa
RJP60D0
Política de seguridad
(Los productos cuentan con garantía limitada, por favor revisa nuestras condiciones)
Shipping and Returns
All products come with a warranty against manufacturing defects.
Trademark Disclaimer
All trademarks, logos, and part numbers are the property of their respective owners click for more
Features
Silicon N Channel IGBT
Short circuit withstand time (5 us typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.6 typ. (IC = 22 A, Vge = 15 V, Ta = 25 C)
Gate to emitter voltage rating +- 30 V
Pb-free lead plating and chip bonding
Aplications
Semiconductors High Power Equipment Repair
RJP60D0
Riferimenti Specifici
- MPN
- RJP60D0
Commenti (0)
Ancora nessuna recensione da parte degli utenti.
16 altri prodotti della stessa categoria:
