- On request
MG50Q1BS11
$ 47,25
Sem imposto
MODULOS IGBT DE CANAL N
Última actualización
MG50Q1BS1150A/600V/1U
No Identificado
Delivery time :
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Features
SILICON N CHANNEL IGBT MODULE
The Electrodes are Isolated from Case
High Input Impedance
Enhancement -Mode
High Speed :
tf=1.0us (Max.) (IC = 50A)
Low Saturation Voltage :
VCE(sat)= 2.70V (Max.) (IC = 50A)
Aplications
Applications
High Power Switching
Motor Control
Toshiba * Transistor
Toshiba
MG50Q1BS11
IGBT 50A 1200V SINGLE
MG50Q1BS11
Referências específicas
- MPN
- MG50Q1BS11
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MODULOS IGBT DE CANAL N
Última actualización
50A/600V/1U
No Identificado
Delivery time :