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MG200Q1US51
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  • MG200Q1US51

MG200Q1US51

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MODULOS IGBT DE CANAL N

Última actualización

DatasheetMG200Q1US51

200A/1200V/1U

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Delivery time :

Quantity
On request

  Política de seguridad

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All products come with a warranty against manufacturing defects.

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Features

SILICON N CHANNEL IGBT MODULE

High Input Impedance

High Speed :

tf=0.3us (Max.) @ Inductive Load

Low Saturation Voltage :

VCE(sat) = 3.6V (Max.)

Enhancement-Mode

The Electrodes are Isolated from Case

Aplications

Applications

High Power Switching

Motor Control

Powerex IGBT

Powerex

MG200Q1US51

IGBT 200A 1200V SINGLE

MG200Q1US51

Specific References

MPN
MG200Q1US51
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