- On request
MG300M1UK1
$ 91,88
Sem imposto
MODULOS IGBT DE CANAL N
Última actualización
MG300M1UK1300A/1000V/1U
No Identificado
Delivery time :
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Features
SILICON N CHANNEL IGBT MODULE
Electrodes are Isolated from the heat
sink (2500V AC)
High DC current Gain (hFE) (80 or 100 MIN.)
Low saturation voltage (2 or 2.5V maximum)
Wide safe operation area
Aplications
Applications
High Power Switching
Motor Control
Toshiba * Transistor
Toshiba
MG300M1UK1
TRANSISTOR 300A 1000V SINGLE
MG300M1UK1
Referências específicas
- MPN
- MG300M1UK1
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MODULOS IGBT DE CANAL N
Última actualización
300A/1000V/1U
No Identificado
Delivery time :